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Metal oxide film transistor development breakthrough

By Damir Beciri
18 November 2012

nims-metal-oxide-transistor-1Researchers at the National Institute for Materials Science (NIMS) of Japan cooperated with researchers at the RIKEN Nanoscience Joint Laboratory to develop a metal oxide film transistor which utilizes a material with newly developed atomic composition. The new composition brings the use of potential amorphous silicon transistors successors in next-generation consumer displays a step closer… »